光(guang)(guang)(guang)(guang)(guang)電(dian)(dian)探(tan)測器在光(guang)(guang)(guang)(guang)(guang)通信系(xi)統(tong)中實現(xian)(xian)將(jiang)光(guang)(guang)(guang)(guang)(guang)轉變成電(dian)(dian)的(de)(de)(de)作用，這(zhe)主要是基(ji)于(yu)半(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)材料(liao)的(de)(de)(de)光(guang)(guang)(guang)(guang)(guang)生(sheng)(sheng)伏特(te)效(xiao)應，所(suo)謂的(de)(de)(de)光(guang)(guang)(guang)(guang)(guang)生(sheng)(sheng)伏特(te)效(xiao)應是指(zhi)光(guang)(guang)(guang)(guang)(guang)照使不(bu)均勻半(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)或半(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)與金屬結(jie)合(he)的(de)(de)(de)不(bu)同部位之間產生(sheng)(sheng)電(dian)(dian)位差(cha)的(de)(de)(de)現(xian)(xian)象。(光(guang)(guang)(guang)(guang)(guang)電(dian)(dian)導(dao)(dao)(dao)(dao)(dao)(dao)效(xiao)應是指(zhi)在光(guang)(guang)(guang)(guang)(guang)線作用下，電(dian)(dian)子吸(xi)(xi)收(shou)光(guang)(guang)(guang)(guang)(guang)子能量從(cong)鍵合(he)狀態(tai)過度到(dao)(dao)自由狀態(tai)，而引起(qi)材料(liao)電(dian)(dian)導(dao)(dao)(dao)(dao)(dao)(dao)率(lv)的(de)(de)(de)變化的(de)(de)(de)象。即當光(guang)(guang)(guang)(guang)(guang)照射(she)到(dao)(dao)光(guang)(guang)(guang)(guang)(guang)電(dian)(dian)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)上(shang)時，若這(zhe)個光(guang)(guang)(guang)(guang)(guang)電(dian)(dian)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)為本(ben)征(zheng)半(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)材料(liao)，且光(guang)(guang)(guang)(guang)(guang)輻射(she)能量又足夠(gou)強，光(guang)(guang)(guang)(guang)(guang)電(dian)(dian)材料(liao)價帶上(shang)的(de)(de)(de)電(dian)(dian)子將(jiang)被(bei)激發(fa)到(dao)(dao)導(dao)(dao)(dao)(dao)(dao)(dao)帶上(shang)去(qu)，使光(guang)(guang)(guang)(guang)(guang)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)的(de)(de)(de)電(dian)(dian)導(dao)(dao)(dao)(dao)(dao)(dao)率(lv)變大是指(zhi)由輻射(she)引起(qi)被(bei)照射(she)材料(liao)電(dian)(dian)導(dao)(dao)(dao)(dao)(dao)(dao)率(lv)改變的(de)(de)(de)一種物理現(xian)(xian)象，光(guang)(guang)(guang)(guang)(guang)子作用于(yu)光(guang)(guang)(guang)(guang)(guang)電(dian)(dian)導(dao)(dao)(dao)(dao)(dao)(dao)材料(liao)，形(xing)成本(ben)征(zheng)吸(xi)(xi)收(shou)或雜(za)質吸(xi)(xi)收(shou)，產生(sheng)(sheng)附加的(de)(de)(de)光(guang)(guang)(guang)(guang)(guang)生(sheng)(sheng)載(zai)流子，從(cong)而使半(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)的(de)(de)(de)電(dian)(dian)導(dao)(dao)(dao)(dao)(dao)(dao)率(lv)發(fa)生(sheng)(sheng)變化，產生(sheng)(sheng)光(guang)(guang)(guang)(guang)(guang)電(dian)(dian)導(dao)(dao)(dao)(dao)(dao)(dao)效(xiao)應。)

光(guang)(guang)電(dian)探測器(qi)的基本(ben)工作機理(li)包(bao)括三個過程：(1)光(guang)(guang)生(sheng)(sheng)載流子(zi)在(zai)光(guang)(guang)照下產生(sheng)(sheng);(2)載流子(zi)擴(kuo)散或漂移形成電(dian)流;(3)光(guang)(guang)電(dian)流在(zai)放大電(dian)路(lu)中放大并轉換為電(dian)壓(ya)信號。當探測器(qi)表面有(you)光(guang)(guang)照射時，如(ru)果(guo)材料禁帶寬(kuan)度小(xiao)于入(ru)射光(guang)(guang)光(guang)(guang)子(zi)的能量即(ji)Eg<hv，則(ze)價(jia)帶電(dian)子(zi)可以(yi)躍遷到導帶形成光(guang)(guang)電(dian)流。

   當(dang)光(guang)在(zai)(zai)半(ban)(ban)導(dao)體(ti)(ti)(ti)(ti)中傳輸(shu)時，光(guang)波的(de)(de)能(neng)量(liang)隨著(zhu)傳播會逐(zhu)漸衰減，其原(yuan)因(yin)是(shi)(shi)光(guang)子在(zai)(zai)半(ban)(ban)導(dao)體(ti)(ti)(ti)(ti)中產生(sheng)了吸(xi)收(shou)(shou)(shou)。半(ban)(ban)導(dao)體(ti)(ti)(ti)(ti)對(dui)光(guang)子的(de)(de)吸(xi)收(shou)(shou)(shou)主(zhu)要的(de)(de)吸(xi)收(shou)(shou)(shou)為本征(zheng)(zheng)(zheng)吸(xi)收(shou)(shou)(shou)，本征(zheng)(zheng)(zheng)吸(xi)收(shou)(shou)(shou)分(fen)(fen)為直接(jie)(jie)躍(yue)(yue)遷和(he)間(jian)接(jie)(jie)躍(yue)(yue)遷。通過(guo)測試半(ban)(ban)導(dao)體(ti)(ti)(ti)(ti)的(de)(de)本征(zheng)(zheng)(zheng)吸(xi)收(shou)(shou)(shou)光(guang)譜(pu)除(chu)了可(ke)(ke)以得到半(ban)(ban)導(dao)體(ti)(ti)(ti)(ti)的(de)(de)禁帶寬度等信息外，還可(ke)(ke)以用(yong)來分(fen)(fen)辨直接(jie)(jie)帶隙(xi)半(ban)(ban)導(dao)體(ti)(ti)(ti)(ti)和(he)間(jian)接(jie)(jie)帶隙(xi)半(ban)(ban)導(dao)體(ti)(ti)(ti)(ti)。本征(zheng)(zheng)(zheng)吸(xi)收(shou)(shou)(shou)導(dao)致材(cai)(cai)(cai)料(liao)(liao)的(de)(de)吸(xi)收(shou)(shou)(shou)系數通常(chang)比較高，由于半(ban)(ban)導(dao)體(ti)(ti)(ti)(ti)的(de)(de)能(neng)帶結構所以半(ban)(ban)導(dao)體(ti)(ti)(ti)(ti)具有(you)連(lian)續的(de)(de)吸(xi)收(shou)(shou)(shou)譜(pu)。從(cong)吸(xi)收(shou)(shou)(shou)譜(pu)可(ke)(ke)以看出，當(dang)本征(zheng)(zheng)(zheng)吸(xi)收(shou)(shou)(shou)開(kai)始時，半(ban)(ban)導(dao)體(ti)(ti)(ti)(ti)的(de)(de)吸(xi)收(shou)(shou)(shou)譜(pu)有(you)一明顯的(de)(de)吸(xi)收(shou)(shou)(shou)邊(bian)(bian)。但是(shi)(shi)對(dui)于硅材(cai)(cai)(cai)料(liao)(liao)，由于其是(shi)(shi)間(jian)接(jie)(jie)帶隙(xi)材(cai)(cai)(cai)料(liao)(liao)，與三五族(zu)材(cai)(cai)(cai)料(liao)(liao)相(xiang)比躍(yue)(yue)遷幾(ji)率(lv)較低，因(yin)而只有(you)非(fei)常(chang)小的(de)(de)吸(xi)收(shou)(shou)(shou)系數，同時導(dao)致在(zai)(zai)相(xiang)同能(neng)量(liang)的(de)(de)光(guang)子照射下在(zai)(zai)硅材(cai)(cai)(cai)料(liao)(liao)中的(de)(de)光(guang)的(de)(de)吸(xi)收(shou)(shou)(shou)深度更大。直接(jie)(jie)帶隙(xi)材(cai)(cai)(cai)料(liao)(liao)的(de)(de)吸(xi)收(shou)(shou)(shou)邊(bian)(bian)比間(jian)接(jie)(jie)帶隙(xi)材(cai)(cai)(cai)料(liao)(liao)陡峭很多(duo)，如(ru)圖 畫出了幾(ji)種(zhong)常(chang)用(yong)半(ban)(ban)導(dao)體(ti)(ti)(ti)(ti)材(cai)(cai)(cai)料(liao)(liao)(如(ru) GaAs、InP、InAs、Si、Ge、GaP 等材(cai)(cai)(cai)料(liao)(liao))的(de)(de)入射光(guang)波長和(he)光(guang)吸(xi)收(shou)(shou)(shou)系數、滲透深度的(de)(de)關系。

　　光(guang)電探(tan)測器(qi)的(de)性(xing)能指標(biao)主要(yao)由(you)量子(zi)效率、響(xiang)應(ying)度、響(xiang)應(ying)速度和(he)本(ben)征帶寬、光(guang)電流，暗電流和(he)噪聲等指標(biao)組(zu)成(cheng)：

1、量子效率：

　(wa 表示吸收層的厚度，αs表示光(guang)吸收系(xi)(xi)數，入(ru)射波(bo)長 λ、材料(liao)消光(guang)系(xi)(xi)數 k 決定吸收系(xi)(xi)數 αs=4πk/λ。)考慮實際情(qing)況，入(ru)射光(guang)在探(tan)測器(qi)表面會(hui)被反射。同(tong)時探(tan)測器(qi)表面存在一定寬度的接(jie)觸摻雜區域，其中也會(hui)產(chan)生光(guang)子的消耗，考慮以(yi)上兩種因素(su)的量子效率(lv)的表達式：

　其(qi)中 d 表(biao)示(shi)接(jie)觸層厚(hou)度，Rf表(biao)示(shi)光電(dian)探測器表(biao)面的反射率。反射率與界面的折射率 nsc和吸收(shou)層的消光系數 κ 有關，Rf可以(yi)表(biao)示(shi)成下(xia)式：

2、響應度

　　定義為光電(dian)探測器產生光電(dian)流(liu)與入射光功率(lv)比(bi)，單(dan)位通常為 A/W。響應度(du)與量子效率(lv)的大小有關，為量子效率(lv)的外在體現。響應度(du) R ：

　　IP表(biao)示(shi)(shi)光電(dian)(dian)探測器(qi)產(chan)生的光電(dian)(dian)流，Pr代表(biao)入射光功率(lv)。則量(liang)子效率(lv)可(ke)變為下式表(biao)示(shi)(shi)：

進(jin)而可獲得響應度(du)反應式為(wei)：

　　可知響應(ying)度(du)與量(liang)子效率(lv)成正比(bi)，由于硅材料(liao)本身為間接帶隙(xi)，所(suo)以材料(liao)的(de)量(liang)子效率(lv)較(jiao)低，硅基光電探測器的(de)響應(ying)度(du)也較(jiao)小。

3、響應(ying)速(su)度和反應(ying)帶寬：

　　響應(ying)速度(du)可以用光(guang)生載(zai)流子(zi)的(de)渡越(yue)(yue)時間(jian)表(biao)示，載(zai)流子(zi)的(de)渡越(yue)(yue)時間(jian)外在的(de)頻率響應(ying)的(de)表(biao)現就是探(tan)測(ce)(ce)器(qi)的(de)帶寬(kuan)。光(guang)生載(zai)流子(zi)的(de)渡越(yue)(yue)時間(jian)在光(guang)生電流變(bian)化中表(biao)現為兩部分(fen)：上升(sheng)時間(jian)和下降(jiang)時間(jian)。通常取上升(sheng)時間(jian)和下降(jiang)時間(jian)中的(de)較大者(zhe)衡量探(tan)測(ce)(ce)器(qi)的(de)響應(ying)速度(du)。決定(ding)探(tan)測(ce)(ce)器(qi)響應(ying)速度(du)的(de)因素主要有(you)：

　　⑴、耗盡(jin)區(qu)載(zai)流子(zi)渡(du)越時(shi)間(jian)：載(zai)流子(zi)的(de)渡(du)越時(shi)間(jian)是(shi)影響探測(ce)器(qi)響應速(su)度(du)的(de)重要因素，當耗盡(jin)區(qu)電場強度(du)達到max時(shi)， Wd表(biao)示(shi)載(zai)流子(zi)的(de)max漂移速(su)度(du)，W表(biao)示(shi)耗盡(jin)區(qu)寬度(du)，那(nei)么載(zai)流子(zi)的(de)渡(du)越時(shi)間(jian)為：

t=W/Vd

　　⑵耗(hao)盡區外載(zai)(zai)(zai)流子(zi)(zi)擴(kuo)散(san)(san)(san)時(shi)間：載(zai)(zai)(zai)流子(zi)(zi)擴(kuo)散(san)(san)(san)的(de)速度(du)較(jiao)慢(man)，同(tong)時(shi)大多數產(chan)生于耗(hao)盡區之(zhi)外的(de)載(zai)(zai)(zai)流子(zi)(zi)的(de)壽命非常短，復合發生速度(du)快。所以(yi)擴(kuo)散(san)(san)(san)運(yun)動(dong)只對距(ju)離耗(hao)盡區范圍(wei)較(jiao)近的(de)載(zai)(zai)(zai)流子(zi)(zi)才能通過擴(kuo)散(san)(san)(san)運(yun)動(dong)達到耗(hao)盡區中，并在電(dian)場中漂(piao)移產(chan)生光電(dian)流。Dc表示載(zai)(zai)(zai)流子(zi)(zi)的(de)擴(kuo)散(san)(san)(san)系(xi)數，d 表示擴(kuo)散(san)(san)(san)距(ju)離，則(ze)擴(kuo)散(san)(san)(san)時(shi)間如下式：

⑶光電(dian)二極管耗盡區電(dian)容：越大，響應(ying)速度就越慢。

　　為了(le)達(da)到較優的探(tan)測(ce)器(qi)(qi)的響應速度(du)，需要在探(tan)測(ce)器(qi)(qi)的吸(xi)收(shou)層厚(hou)(hou)度(du)和光電探(tan)測(ce)器(qi)(qi)的面積中(zhong)折衷。如(ru)增大探(tan)測(ce)器(qi)(qi)材(cai)料的吸(xi)收(shou)層厚(hou)(hou)度(du)可(ke)(ke)(ke)以有(you)(you)效(xiao)減小耗盡區(qu)平板電容，同時(shi)可(ke)(ke)(ke)增大吸(xi)收(shou)層厚(hou)(hou)度(du)可(ke)(ke)(ke)以提高探(tan)測(ce)器(qi)(qi)的量子效(xiao)率(lv)。但(dan)是吸(xi)收(shou)層厚(hou)(hou)度(du)的增加導(dao)致耗盡區(qu)寬度(du)的變大，是光生載(zai)流子渡(du)越時(shi)間變長而(er)有(you)(you)可(ke)(ke)(ke)能降低探(tan)測(ce)器(qi)(qi)的響應速度(du)。

　　⑷暗電流和噪聲

　　光(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)指(zhi)在(zai)入(ru)射光(guang)(guang)(guang)照(zhao)射下(xia)(xia)(xia)光(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)探(tan)(tan)(tan)測(ce)器(qi)(qi)(qi)(qi)(qi)所(suo)產生(sheng)(sheng)(sheng)的(de)(de)(de)光(guang)(guang)(guang)生(sheng)(sheng)(sheng)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)，暗(an)(an)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)可(ke)以(yi)(yi)(yi)(yi)定義為(wei)沒有光(guang)(guang)(guang)入(ru)射的(de)(de)(de)情(qing)況下(xia)(xia)(xia)探(tan)(tan)(tan)測(ce)器(qi)(qi)(qi)(qi)(qi)存(cun)在(zai)的(de)(de)(de)漏(lou)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)。其大(da)小(xiao)(xiao)影響著光(guang)(guang)(guang)接(jie)收機的(de)(de)(de)靈敏(min)度大(da)小(xiao)(xiao)，是探(tan)(tan)(tan)測(ce)器(qi)(qi)(qi)(qi)(qi)的(de)(de)(de)主(zhu)要(yao)(yao)指(zhi)標之一(yi)。暗(an)(an)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)主(zhu)要(yao)(yao)包(bao)括以(yi)(yi)(yi)(yi)下(xia)(xia)(xia)幾種：①耗(hao)盡區中邊界的(de)(de)(de)少子(zi)(zi)擴散電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu);②載(zai)(zai)流(liu)(liu)(liu)(liu)子(zi)(zi)的(de)(de)(de)產生(sheng)(sheng)(sheng)-復合電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)，通(tong)過(guo)在(zai)加工中消(xiao)除硅(gui)材料的(de)(de)(de)晶格缺陷，可(ke)以(yi)(yi)(yi)(yi)有效減(jian)小(xiao)(xiao)載(zai)(zai)流(liu)(liu)(liu)(liu)子(zi)(zi)的(de)(de)(de)產生(sheng)(sheng)(sheng)-復合電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)，通(tong)常對(dui)于(yu)高純(chun)度的(de)(de)(de)單晶硅(gui)產生(sheng)(sheng)(sheng)-復合電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)可(ke)以(yi)(yi)(yi)(yi)降低到2*1011A/nm2  以(yi)(yi)(yi)(yi)下(xia)(xia)(xia);③表(biao)(biao)面(mian)泄漏(lou)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)，在(zai)制造工藝結(jie)束時(shi)，對(dui)芯片表(biao)(biao)面(mian)進行鈍化處理(li)，可(ke)以(yi)(yi)(yi)(yi)將(jiang)表(biao)(biao)面(mian)漏(lou)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)降低到 1011A/nm2量級。當然(ran)，暗(an)(an)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)也受探(tan)(tan)(tan)測(ce)器(qi)(qi)(qi)(qi)(qi)工作溫度和偏置電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)的(de)(de)(de)影響。探(tan)(tan)(tan)測(ce)器(qi)(qi)(qi)(qi)(qi)的(de)(de)(de)暗(an)(an)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)與噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng)是分不開的(de)(de)(de)，通(tong)常光(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)探(tan)(tan)(tan)測(ce)器(qi)(qi)(qi)(qi)(qi)的(de)(de)(de)噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng)主(zhu)要(yao)(yao)分為(wei)暗(an)(an)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng)、散粒(li)(li)噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng)和熱(re)(re)噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng)：a暗(an)(an)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng)：對(dui)于(yu)一(yi)個光(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)探(tan)(tan)(tan)測(ce)器(qi)(qi)(qi)(qi)(qi)來講，可(ke)接(jie)收的(de)(de)(de)min光(guang)(guang)(guang)功率(lv)是由(you)探(tan)(tan)(tan)測(ce)器(qi)(qi)(qi)(qi)(qi)的(de)(de)(de)暗(an)(an)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)決定的(de)(de)(de)，所(suo)以(yi)(yi)(yi)(yi)減(jian)小(xiao)(xiao)探(tan)(tan)(tan)測(ce)器(qi)(qi)(qi)(qi)(qi)的(de)(de)(de)暗(an)(an)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)能提高光(guang)(guang)(guang)接(jie)收機的(de)(de)(de)靈敏(min)度;b散粒(li)(li)噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng)：當探(tan)(tan)(tan)測(ce)器(qi)(qi)(qi)(qi)(qi)接(jie)收入(ru)射光(guang)(guang)(guang)時(shi)，散粒(li)(li)噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng)就產生(sheng)(sheng)(sheng)于(yu)光(guang)(guang)(guang)子(zi)(zi)的(de)(de)(de)產生(sheng)(sheng)(sheng)-復合過(guo)程中。由(you)于(yu)光(guang)(guang)(guang)生(sheng)(sheng)(sheng)載(zai)(zai)流(liu)(liu)(liu)(liu)子(zi)(zi)的(de)(de)(de)數量變化規律服(fu)從泊松統計分部，所(suo)以(yi)(yi)(yi)(yi)光(guang)(guang)(guang)生(sheng)(sheng)(sheng)載(zai)(zai)流(liu)(liu)(liu)(liu)子(zi)(zi)的(de)(de)(de)產生(sheng)(sheng)(sheng)過(guo)程存(cun)在(zai)散粒(li)(li)噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng);c熱(re)(re)噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng)：由(you)于(yu)導體中電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)隨(sui)機運動會產生(sheng)(sheng)(sheng)導體兩端電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)的(de)(de)(de)波動，因此就會產生(sheng)(sheng)(sheng)熱(re)(re)噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng)。光(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)探(tan)(tan)(tan)測(ce)器(qi)(qi)(qi)(qi)(qi)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路模型中包(bao)含的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)為(wei)其熱(re)(re)噪(zao)(zao)聲(sheng)(sheng)(sheng)(sheng)的(de)(de)(de)主(zhu)要(yao)(yao)來源。

（來(lai)源：網絡，版權(quan)歸原作者，若有侵(qin)權(quan)請聯系刪除(chu)）